| PART |
Description |
Maker |
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
| STW5NB100 5965 |
N-CHANNEL 1000 - 4 OHM - 4.3A - TO-247 POWERMESH MOSFET
N - CHANNEL 1000V - 4 - 4.3A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT17F100B APT17F100S |
N-Channel FREDFET 1000V, 17A, 0.80Ω Max, trr ?45ns
N-Channel FREDFET 1000V, 17A, 0.80ヘ Max, trr ÷245ns
|
Microsemi Corporation
|
| HGTG20N100D2 |
20A, 1000V N-Channel IGBT 34 A, 1000 V, N-CHANNEL IGBT, TO-247
20A/ 1000V N-Channel IGBT
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SCD4003 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| HS-1145RH |
Op Amp, Video, Current Feedback, 360MHz, 1000V/s, Disable
|
Intersil
|
| KBP2005G |
2.0 AMP GLASS PASSIVATED BRIDGE RECTIFIER - 50V-1000V
|
WILLAS ELECTRONIC CORP
|
| 4GBJ8005 4GBJ801 4GBJ804 4GBJ806 4GBJ810 4GBJ802 4 |
Voltage 50V ~ 1000V 8.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS807G RS806G RS801G RS802G |
VOLTAGE 50V ~ 1000V 8.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS1505G |
VOLTAGE 50V ~ 1000V 15.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
| STF3NK100Z STP3NK100Z STD3NK100Z |
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH?/a> Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
